Area dependent deep depletion behavior in the capacitance-voltage characteristics of metal-oxide-semiconductor structures with ultra-thin oxides
Journal
Journal of Applied Physics
Journal Volume
110
Journal Issue
11
Date Issued
2011
Author(s)
Abstract
The deep depletion behaviors in the C-V curves of metal-oxide-semiconductor (MOS) structure with various gate areas are studied. A model with three regions of depletion-inversion, edge deep depletion, and bulk deep depletion was proposed. The larger gate area shows a larger effective uniform area ratio K eff than the smaller one. The effective non-uniform edge width X eff was extracted according to the data of two various gate areas. The extracted X eff's at large bias for three areas are used to simulate the experimental data further, and the results are satisfactory for devices with three gate areas in bulk deep depletion region. © 2011 American Institute of Physics.
Type
journal article