Characterization of optical and photoelectrical properties of ZnO crystals
Journal
Acta Physica Polonica A
Journal Volume
119
Journal Issue
2
Pages
274-276
Date Issued
2011
Author(s)
Onufrijevs, P.
Serevicius, T.
Scajev, P.
Manolis, G.
Medvids, A.
Chernyak, L.
Kuokstis, E.
Yang, C.C.
Jarasiunas, K.
Abstract
We characterized optical and photoelectrical properties of undoped and Ga-doped ZnO layers differently grown on sapphire substrates by using complementary optical methods. Different stimulated emission threshold values for ZnO epitaxial layers grown by pulsed laser deposition and MBE methods were attributed to crystalline quality of the layers and the growth method used. Different carrier lifetimes in various ZnO epitaxial layers are explained by defect-related and intrinsic mechanisms of recombination.
Type
journal article