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College of Science / 理學院
Applied Physics / 應用物理研究所
The growth of an epitaxial ZnO film on Si (111) with a Gd2O3 (Ga2O3) buffer layer
Details
The growth of an epitaxial ZnO film on Si (111) with a Gd2O3 (Ga2O3) buffer layer
Journal
Crystal Growth & Design
Journal Volume
11
Journal Issue
7
Pages
2846-2851
Date Issued
2011
Author(s)
Lin, BH
Liu, WR
Yang, S
Kuo, CC
Hsu, C-H
Hsieh, WF
Lee, WC
Lee, YJ
MINGHWEI HONG
Kwo, J
URI
http://scholars.lib.ntu.edu.tw/handle/123456789/364353
Type
journal article