https://scholars.lib.ntu.edu.tw/handle/123456789/364953
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Shiu, S.-C. | en_US |
dc.contributor.author | Lin, T.-C. | en_US |
dc.contributor.author | Pun, K.-L. | en_US |
dc.contributor.author | Syu, H.-J. | en_US |
dc.contributor.author | Hung, S.-C. | en_US |
dc.contributor.author | Lin, C.-F. | en_US |
dc.contributor.author | CHING-FUH LIN | zz |
dc.creator | Shiu, S.-C.;Lin, T.-C.;Pun, K.-L.;Syu, H.-J.;Hung, S.-C.;Lin, C.-F. | - |
dc.date.accessioned | 2018-09-10T08:42:05Z | - |
dc.date.available | 2018-09-10T08:42:05Z | - |
dc.date.issued | 2011 | - |
dc.identifier.uri | http://www.scopus.com/inward/record.url?eid=2-s2.0-80054072118&partnerID=MN8TOARS | - |
dc.identifier.uri | http://scholars.lib.ntu.edu.tw/handle/123456789/364953 | - |
dc.description.abstract | Crystalline Si photovoltaic modules still have high production cost due to significant consumption of the Si wafer. Reducing the large amount of Si material consumption is thus a critical issue. Here we develop a two-step metal-assisted etching technique for forming vertically-aligned Si nanohole thin films from bulk Si wafers. The formation of Si nanohole thin films includes a series of solution processes: deposition of Ag nanoparticles in an AgNO 3/ HF aqueous solution, formation of Si nanohole arrays at the first-step metal-assisted etching, and side etching of the roots of the nanohole structure at the second-step metal-assisted etching. All the processes can proceed at around room temperature. A Si nanohole thin film with an average hole-size of 100 nm and a thickness of 5μm-20μm was hence formed at the top of the wafer. Afterwards, the Si nanohole thin film was transferred onto alien substrates. The Si nanohole thin film has the crystal quality similar to the bulk Si wafer. The above bulk Si substrate can be reused. With similar processes, other Si nanohole thin films can be formed from the above recycled Si wafer. The hole size and thickness are similar. The Si wafers recycled will significantly reduce the material consumption of Si. Thus, such technique is promising for lowering the cost of Si solar cells. © 2011 SPIE. | - |
dc.language | en | en |
dc.relation.ispartof | Proceedings of SPIE - The International Society for Optical Engineering | en_US |
dc.source | AH-Scopus to ORCID | - |
dc.subject | Lithium battery anode; Metal-assisted etching; Photovoltaic; Si nanohole; Si nanohole powder; Si wafer recycling; Transfer | - |
dc.subject.classification | [SDGs]SDG7 | - |
dc.subject.other | Lithium battery anode; Metal-assisted etching; Photovoltaic; Si wafer recycling; Transfer; Deposition; Etching; Fabrication; Film thickness; Hydrofluoric acid; Lithium; Metals; Optics; Photovoltaic effects; Recycling; Silicon; Silicon wafers; Silver; Substrates; Thin films; Vapor deposition; Semiconducting silicon compounds | - |
dc.title | Fabrication of multiple Si nanohole thin films from bulk wafer by controlling metal-assisted etching direction | - |
dc.type | conference paper | en |
dc.identifier.doi | 10.1117/12.893275 | - |
dc.relation.journalvolume | 8102 | - |
item.openairetype | conference paper | - |
item.fulltext | no fulltext | - |
item.cerifentitytype | Publications | - |
item.openairecristype | http://purl.org/coar/resource_type/c_5794 | - |
item.grantfulltext | none | - |
crisitem.author.dept | Photonics and Optoelectronics | - |
crisitem.author.dept | Electrical Engineering | - |
crisitem.author.dept | Electronics Engineering | - |
crisitem.author.orcid | 0000-0003-3787-2163 | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
顯示於: | 電機工程學系 |
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