https://scholars.lib.ntu.edu.tw/handle/123456789/365470| Title: | A high performance inverted organic light emitting diode using an electron transporting material with low energy barrier for electron injection | Authors: | Lee, J.-H. Wang, P.-S. Park, H.-D. Wu, C.-I. Kim, J.-J. CHIH-I WU |
Keywords: | Electron injection; Flexible OLED; Inverted organic light emitting diodes; n-Doped/undoped organic semiconductor junction | Issue Date: | 2011 | Journal Volume: | 12 | Journal Issue: | 11 | Start page/Pages: | 1763-1767 | Source: | Organic Electronics: physics, materials, applications | Abstract: | A high performance inverted green emission organic light emitting diode with a maximum external quantum efficiency of 20% and a maximum power efficiency of 80 lm/W was realized by properly selecting an electron transporting material to have no energy barrier for electron injection between the n-doped electron transporting layer (n-ETL) and the ETL. Based on the energy levels and the current density-voltage characteristics of electron only devices, we demonstrate that the interface between an n-ETL and an ETL even in homo-junction is as important as the interface between the cathode and the n-ETL for efficient electron injection into an emitting layer. © 2011 Elsevier B.V. All rights reserved. |
URI: | http://www.scopus.com/inward/record.url?eid=2-s2.0-80051603070&partnerID=MN8TOARS http://scholars.lib.ntu.edu.tw/handle/123456789/365470 |
DOI: | 10.1016/j.orgel.2011.07.015 | SDG/Keyword: | Doping (additives); Electron injection; Electrons; Energy barriers; Energy efficiency; Semiconductor diodes; Semiconductor junctions; Current density-voltage characteristics; Efficient electron injection; Electron transporting layer; Electron transporting materials; External quantum efficiency; Flexible OLED; Green emissions; N-doped; Organic light emitting diodes (OLED) [SDGs]SDG7 |
| Appears in Collections: | 光電工程學研究所 |
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