|Title:||A high performance inverted organic light emitting diode using an electron transporting material with low energy barrier for electron injection||Authors:||Lee, J.-H.
|Keywords:||Electron injection; Flexible OLED; Inverted organic light emitting diodes; n-Doped/undoped organic semiconductor junction||Issue Date:||2011||Journal Volume:||12||Journal Issue:||11||Start page/Pages:||1763-1767||Source:||Organic Electronics: physics, materials, applications||Abstract:||
A high performance inverted green emission organic light emitting diode with a maximum external quantum efficiency of 20% and a maximum power efficiency of 80 lm/W was realized by properly selecting an electron transporting material to have no energy barrier for electron injection between the n-doped electron transporting layer (n-ETL) and the ETL. Based on the energy levels and the current density-voltage characteristics of electron only devices, we demonstrate that the interface between an n-ETL and an ETL even in homo-junction is as important as the interface between the cathode and the n-ETL for efficient electron injection into an emitting layer. © 2011 Elsevier B.V. All rights reserved.
|DOI:||10.1016/j.orgel.2011.07.015||SDG/Keyword:||Doping (additives); Electron injection; Electrons; Energy barriers; Energy efficiency; Semiconductor diodes; Semiconductor junctions; Current density-voltage characteristics; Efficient electron injection; Electron transporting layer; Electron transporting materials; External quantum efficiency; Flexible OLED; Green emissions; N-doped; Organic light emitting diodes (OLED)
|Appears in Collections:||光電工程學研究所|
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