Raman scattering in InAsxSbyP1-x-y alloys grown by gas source MBE
Journal
Journal of Physics D: Applied Physics
Journal Volume
44
Journal Issue
8
Pages
085404
Date Issued
2011-03
Author(s)
Abstract
The Raman spectra of quaternary InAsxSbyP 1-x-y epitaxial layers nominally lattice-matched to (100) n-type InAs substrates are reported. The phonon peaks are identified for alloys covering a wide composition range extending into the miscibility gap. Three-mode behaviour was obtained across part of the composition range. InP-like longitudinal optical (LO) and transverse optical (TO) phonons were observed over the entire compositional range, but InAs-like LO phonons were only observed at high arsenic concentrations and no InSb-like TO phonons were observed. Disorder-related phonon peaks were obtained for alloy compositions within the miscibility gap. © 2011 IOP Publishing Ltd.
Other Subjects
Alloy compositions; Arsenic concentration; Composition ranges; Compositional range; Gas-source MBE; InAs; InP; Lattice-matched; LO phonons; Longitudinal optical; Miscibility gap; Phonon peaks; Raman spectra; Transverse optical phonons; Alloys; Arsenic; Indium antimonides; Indium arsenide; Raman scattering; Raman spectroscopy; Semiconducting indium; Solubility; Phonons
Type
journal article