Electrical measurements of an AlGaN/GaN high-electron-mobility transistor structure grown on Si

Journal

Journal of the Korean Physical Society

Journal Volume

61

Journal Issue

9

Pages

1471-1475

Date Issued

2012

Author(s)

DOI

10.3938/jkps.61.1471

URI

http://www.scopus.com/inward/record.url?eid=2-s2.0-84869382227&partnerID=MN8TOARS

http://scholars.lib.ntu.edu.tw/handle/123456789/371242

Type

journal article