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College of Science / 理學院
Applied Physics / 應用物理研究所
In-situ MBE and ALD deposited HfO2 on In0. 53Ga0. 47As
Details
In-situ MBE and ALD deposited HfO2 on In0. 53Ga0. 47As
Journal
APS Meeting Abstracts
Journal Volume
1
Pages
28004
Date Issued
2012
Author(s)
Lee, WC
Lin, CA
Huang, ML
Kwo, J
Chang, YH
Chang, P
Lin, TD
MINGHWEI HONG
URI
http://scholars.lib.ntu.edu.tw/handle/123456789/371832
Type
conference paper