A transition of three to two dimensional Si growth on Ge (100) substrate

Journal

Journal of Applied Physics

Journal Volume

112

Journal Issue

12

Date Issued

2012

Author(s)

Tu, W.-H.

Lee, C.-H.

Chang, H.T.

Lin, B.-H.

Hsu, C.-H.

Lee, S.W.

DOI

10.1063/1.4770408

URI

http://www.scopus.com/inward/record.url?eid=2-s2.0-84886825552&partnerID=MN8TOARS

http://scholars.lib.ntu.edu.tw/handle/123456789/372793

Type

journal article