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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
4H-SiC wafers studied by X-ray absorption and Raman scattering
Details
4H-SiC wafers studied by X-ray absorption and Raman scattering
Journal
Materials Science Forum
Journal Volume
717-720
Pages
509-512
Date Issued
2012
Author(s)
CHEE-WEE LIU
DOI
10.4028/www.scientific.net/MSF.717-720.509
URI
http://www.scopus.com/inward/record.url?eid=2-s2.0-84861380304&partnerID=MN8TOARS
http://scholars.lib.ntu.edu.tw/handle/123456789/372795
Type
book