https://scholars.lib.ntu.edu.tw/handle/123456789/372796
Title: | The effect of hydrogen on the surface segregation of phosphorus in epitaxially grown relaxed Si 0.7Ge 0.3 films by rapid thermal chemical vapor deposition | Authors: | Li, J.-Y. Huang, C.-T. Sturm, J.C. JIUN-YUN LI |
Issue Date: | 2012 | Journal Volume: | 101 | Journal Issue: | 14 | Source: | Applied Physics Letters | URI: | http://www.scopus.com/inward/record.url?eid=2-s2.0-84867533831&partnerID=MN8TOARS http://scholars.lib.ntu.edu.tw/handle/123456789/372796 |
DOI: | 10.1063/1.4757123 |
Appears in Collections: | 電機工程學系 |
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