High breakdown voltage schottky gating of doped Si/SiGe 2DEG systems enabled by suppression of phosphorus surface segregation
Journal
2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012
Pages
170-171
Date Issued
2012
Author(s)
Abstract
In this study, the suppression of phosphorus segregation by low temperature (525�XC) cap layer growth results in high breakdown voltage of Schottky gates on modulation-doped Si/SiGe heterostructures. The wide window to deplete two-dimensional electron gas (2DEGs) via negative bias with very low leakage thus enables Schottky split gate quantum devices.
Type
conference paper