https://scholars.lib.ntu.edu.tw/handle/123456789/372798| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Huang, C.-T. | en_US |
| dc.contributor.author | Li, J.-Y. | en_US |
| dc.contributor.author | Sturm, J.C. | en_US |
| dc.contributor.author | JIUN-YUN LI | zz |
| dc.creator | Huang, C.-T.;Li, J.-Y.;Sturm, J.C. | - |
| dc.date.accessioned | 2018-09-10T09:22:35Z | - |
| dc.date.available | 2018-09-10T09:22:35Z | - |
| dc.date.issued | 2012 | - |
| dc.identifier.uri | http://www.scopus.com/inward/record.url?eid=2-s2.0-84864265333&partnerID=MN8TOARS | - |
| dc.identifier.uri | http://scholars.lib.ntu.edu.tw/handle/123456789/372798 | - |
| dc.language | en | en |
| dc.relation.ispartof | 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 | - |
| dc.source | AH-Scopus to ORCID | - |
| dc.title | High breakdown voltage schottky gating of doped Si/SiGe 2DEG systems enabled by suppression of phosphorus surface segregation | - |
| dc.type | conference paper | en |
| dc.identifier.doi | 10.1109/ISTDM.2012.6222514 | - |
| dc.relation.pages | 170-171 | - |
| item.openairetype | conference paper | - |
| item.fulltext | no fulltext | - |
| item.grantfulltext | none | - |
| item.openairecristype | http://purl.org/coar/resource_type/c_5794 | - |
| item.cerifentitytype | Publications | - |
| crisitem.author.dept | Electrical Engineering | - |
| crisitem.author.dept | Electronics Engineering | - |
| crisitem.author.orcid | 0000-0003-4905-9954 | - |
| crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
| crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
| Appears in Collections: | 電機工程學系 | |
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