https://scholars.lib.ntu.edu.tw/handle/123456789/372800
標題: | Extremely sharp phosphorus turn-off slope and effect of hydrogen on phosphorus surface segregation in epitaxially-grown relaxed Si0.7Ge0.3 by RTCVD | 作者: | Li, J.-Y. Huang, C.-T. Sturm, J.C. JIUN-YUN LI |
公開日期: | 2012 | 起(迄)頁: | 20-21 | 來源出版物: | 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 | URI: | http://www.scopus.com/inward/record.url?eid=2-s2.0-84864184998&partnerID=MN8TOARS http://scholars.lib.ntu.edu.tw/handle/123456789/372800 |
DOI: | 10.1109/ISTDM.2012.6222436 |
顯示於: | 電機工程學系 |
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