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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Extremely low electron density in a modulation-doped Si/SiGe two-dimensional electron gases by effective schottky gating
Details
Extremely low electron density in a modulation-doped Si/SiGe two-dimensional electron gases by effective schottky gating
Journal
ECS Transactions
Journal Volume
50
Journal Issue
6
Pages
145-149
Date Issued
2012
Author(s)
Li, J.Y.
Huang, C.T.
Rokhinson, L.P.
Sturm, J.C.
JIUN-YUN LI
DOI
10.1149/05006.0145ecst
URI
http://www.scopus.com/inward/record.url?eid=2-s2.0-84885776713&partnerID=MN8TOARS
http://scholars.lib.ntu.edu.tw/handle/123456789/372801
Type
conference paper
