Extremely low electron density in a modulation-doped Si/SiGe two-dimensional electron gases by effective schottky gating
Journal
ECS Transactions
Journal Volume
50
Journal Issue
6
Pages
145-149
Date Issued
2012
Author(s)
Abstract
We reported an extremely low electron density (8.3 x 1010 cm-2) of a modulation-doped Si/SiGe two-dimensional electron gas by Schottky gating. Effective Schottky gating with extremely low gate leakage current was enabled by low-temperature chemical vapor deposition epitaxial growth to suppress the surface segregation of phosphorus. Furthermore, an extremely high electron mobility of ∼ 504,000 cm2/V-s at 0.3 K was also reported. © The Electrochemical Society.
SDGs
Type
conference paper