https://scholars.lib.ntu.edu.tw/handle/123456789/377756
標題: | Scaling performance of Ga2O3/GaN nanowire field effect transistor | 作者: | Li, Chi-Kang Yeh, Po-Chun Yu, Jeng-Wei LUNG-HAN PENG YUH-RENN WU |
公開日期: | 2013 | 卷: | 114 | 期: | 16 | 來源出版物: | Journal of Applied Physics | 摘要: | A three-dimensional finite element solver is applied to investigate the performance of Ga2O3/GaN nanowire transistors. Experimental nanowire results of 50 nm gate length are provided to compare with the simulation, and they show good agreement. The performance of a shorter gate length (<50 nm) is studied and scaling issues of the short-channel effect are analyzed. With a better surrounding gate design and a recessed gate approach, the optimal conditions for a 20 nm gate length are explored in this paper. © 2013 AIP Publishing LLC. |
URI: | http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000326639200046&KeyUID=WOS:000326639200046 http://scholars.lib.ntu.edu.tw/handle/123456789/377756 https://www.scopus.com/inward/record.uri?eid=2-s2.0-84887270932&doi=10.1063%2f1.4827190&partnerID=40&md5=06b31318c4dcc5168b707906da691ba2 |
ISSN: | 00218979 | DOI: | 10.1063/1.4827190 | SDG/關鍵字: | Gate length; Nanowire transistors; Optimal conditions; Recessed gate; Short-channel effect; Surrounding-gate; Three dimensional finite elements; Nanowires; Gallium nitride |
顯示於: | 光電工程學研究所 |
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