Microwave determination of quantum-well capture and escape time in light-emitting transistors
Journal
IEEE Transactions on Electron Devices
Journal Volume
60
Journal Issue
3
Pages
1088-1091
Date Issued
2013
Author(s)
Abstract
We report the determination of quantum-well (QW) capture and escape time by utilizing electrical microwave measurement on an InGaP/GaAs light-emitting transistor (LET) platform. The emitter-to-collector transit times of the LET and the heterojunction bipolar transistor (HBT) are measured and extracted under the same bias condition ( and ). Small-signal model analysis shows that the LET exhibits a larger base transit time of 25 ps compared with 5 ps of the HBT. The difference, i.e., 20 ps, hence is attributed to the carrier capturing/escaping processes caused by the QWs embedded in the base region of the LET.
Type
journal article