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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Sensitivity enhancement of metal-oxide-semiconductor tunneling photodiode with trapped electrons in ultra-thin SiO2 layer
Details
Sensitivity enhancement of metal-oxide-semiconductor tunneling photodiode with trapped electrons in ultra-thin SiO2 layer
Journal
ECS Transactions
Journal Volume
58
Journal Issue
8
Pages
79-85
Date Issued
2013
Author(s)
Chen, T.-Y.
Hwu, J.-G.
JENN-GWO HWU
DOI
10.1149/05808.0079ecst
URI
http://www.scopus.com/inward/record.url?eid=2-s2.0-84904917657&partnerID=MN8TOARS
http://scholars.lib.ntu.edu.tw/handle/123456789/378068
Type
conference paper
