https://scholars.lib.ntu.edu.tw/handle/123456789/378076| Title: | Effect of electrons trapping/de-trapping at Si-SiO2 interface on two-state current in MOS(p) structure with ultra-thin SiO2 by anodization | Authors: | Chen, T.-Y. Pang, C.-S. Hwu, J.-G. JENN-GWO HWU |
Issue Date: | 2013 | Journal Volume: | 2 | Journal Issue: | 9 | Source: | ECS Journal of Solid State Science and Technology | URI: | http://www.scopus.com/inward/record.url?eid=2-s2.0-84887349519&partnerID=MN8TOARS http://scholars.lib.ntu.edu.tw/handle/123456789/378076 |
DOI: | 10.1149/2.025309jss |
| Appears in Collections: | 電機工程學系 |
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