Unintentional annealing of the active layer in the growth of InGaN/GaN quantum well light-emitting diode structures
Journal
Physica Status Solidi (A) Applications and Materials Science
Journal Volume
210
Journal Issue
8
Pages
1657-1662
Date Issued
2013
Author(s)
Mickevi?ius, J.
Dobrovolskas, D.
?imonyte, I.
Tamulaitis, G.
Chen, C.-Y.
Liao, C.-H.
Chen, H.-S.
Type
journal article