Implant isolation of silicon two-dimensional electron gases at 4.2 K

Journal

IEEE Electron Device Letters

Journal Volume

34

Journal Issue

1

Pages

21-23

Date Issued

2013

Author(s)

Huang, C.-T.

Li, J.-Y.

Sturm, J.C.

DOI

10.1109/LED.2012.2228160

URI

http://www.scopus.com/inward/record.url?eid=2-s2.0-84871772433&partnerID=MN8TOARS

http://scholars.lib.ntu.edu.tw/handle/123456789/380237

Type

journal article