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College of Science / 理學院
Physics / 物理學系
Resistive memory of single SnO2 nanowire based switchable diodes
Details
Resistive memory of single SnO2 nanowire based switchable diodes
Journal
Applied Physics Letters
Journal Volume
104
Journal Issue
21
Date Issued
2014
Author(s)
Nieh, C.H.
Lu, M.L.
Weng, T.M.
YANG-FANG CHEN
DOI
10.1063/1.4880210
URI
http://www.scopus.com/inward/record.url?eid=2-s2.0-84901805497&partnerID=MN8TOARS
http://scholars.lib.ntu.edu.tw/handle/123456789/384543
Type
journal article