Minority carriers induced schottky barrier height modulation in current behavior of metal-oxide-semiconductor tunneling diode
Journal
ECS Journal of Solid State Science and Technology
Journal Volume
3
Journal Issue
6
Date Issued
2014
Author(s)
Abstract
The influence of the lateral electron diffusion current at the edge of p-type metal-oxide-semiconductor (MOS) capacitor is investigated. By comparing two different gate electrode patterns, it is found that the lateral electron diffusion current per perimeter with magnitude 10−10 (A/cm) can provide additional inversion charges near the SiO2/Si interface, resulting in larger voltage drop in the oxide and lower Schottky barrier height of the holes. This effect allows more hole current with magnitude 10−9∼10−8 (A/cm) to inject into the silicon substrate. As a result, the current of MOS capacitor is edge-dependent and controlled by the lateral electron diffusion current.
Type
journal article