Corner induced non-uniform electric field effect on the electrical reliability of metal-oxide-semiconductor devices with non-planar substrates
Journal
Solid-State Electronics
Journal Volume
91
Pages
100-105
Date Issued
2014
Author(s)
Abstract
Stress induced irregular tunneling current and interface trap characteristics were observed in non-planar substrate metal-oxide-semiconductor (MOS) capacitors. The oxide electric field distributions in the concave and convex corner regions of non-planar structure are different. After stressing, the inversion tunneling current was observed to decrease gradually in non-planar sample but decrease then increase in planar one. Moreover, the non-planar sample exhibits two peaks phenomenon in interface capacitance (Cit) after stress which is different from planar one with one peak. A model describing the role of deep depletion (DD) for sample with different treatments is also proposed for the observation. © 2013 Elsevier Ltd. All rights reserved.
SDGs
Type
journal article