https://scholars.lib.ntu.edu.tw/handle/123456789/387194
Title: | Enhancement-Mode {GaN}-Based High-Electron Mobility Transistors on the Si Substrate With a P-Type {GaN} Cap Layer | Authors: | Liang-Yu Su Finella Lee Jian Jang Huang JIAN-JANG HUANG |
Issue Date: | 2014 | Journal Volume: | 61 | Journal Issue: | 2 | Start page/Pages: | 460--465 | Source: | IEEE Transactions on Electron Devices | URI: | http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000330620600031&KeyUID=WOS:000330620600031 http://scholars.lib.ntu.edu.tw/handle/123456789/387194 |
DOI: | 10.1109/TED.2013.2294337 |
Appears in Collections: | 光電工程學研究所 |
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