Correlation of the electronic structure of an interconnection unit with the device performance of tandem organic solar cells
Journal
Journal of Materials Chemistry A
Journal Volume
2
Journal Issue
15
Pages
5450-5454
Date Issued
2014
Abstract
We report the correlation of the electrical properties of the p-doped layer in an interconnection unit with the performance of tandem organic photovoltaic (TOPV) cells where the interconnection unit (ICU) is composed of an electron-transporting layer (ETL)/metal/p-doped hole-transporting layer (p-HTL) by systematically varying the doping concentration of the p-HTL in the ICU. The open circuit voltage is significantly increased as the doping concentration of the p-HTL increases due to the reduction of the difference between the Fermi level and the highest occupied molecular orbital level of the p-HTL. The fill factor is also enhanced with increases in the doping concentration of the p-HTL due to the enhancement of the conductivity in the p-HTL and efficient hole transport at the interface between Ag and the p-HTL through the tunneling process, rather than through the thermionic process. © 2014 the Partner Organisations.
SDGs
Other Subjects
Electric properties; Electronic structure; Hole concentration; Open circuit voltage; Device performance; Doping concentration; Electron-transporting layers; Highest occupied molecular orbital; Hole-transporting layers; Organic photovoltaics; Organic solar cell; Thermionic process; Intensive care units
Type
journal article