|Title:||Correlation of the electronic structure of an interconnection unit with the device performance of tandem organic solar cells||Authors:||Shim, H.-S.
|Issue Date:||2014||Journal Volume:||2||Journal Issue:||15||Start page/Pages:||5450-5454||Source:||Journal of Materials Chemistry A||Abstract:||
We report the correlation of the electrical properties of the p-doped layer in an interconnection unit with the performance of tandem organic photovoltaic (TOPV) cells where the interconnection unit (ICU) is composed of an electron-transporting layer (ETL)/metal/p-doped hole-transporting layer (p-HTL) by systematically varying the doping concentration of the p-HTL in the ICU. The open circuit voltage is significantly increased as the doping concentration of the p-HTL increases due to the reduction of the difference between the Fermi level and the highest occupied molecular orbital level of the p-HTL. The fill factor is also enhanced with increases in the doping concentration of the p-HTL due to the enhancement of the conductivity in the p-HTL and efficient hole transport at the interface between Ag and the p-HTL through the tunneling process, rather than through the thermionic process. © 2014 the Partner Organisations.
|DOI:||10.1039/c3ta14628f||metadata.dc.subject.other:||Electric properties; Electronic structure; Hole concentration; Open circuit voltage; Device performance; Doping concentration; Electron-transporting layers; Highest occupied molecular orbital; Hole-transporting layers; Organic photovoltaics; Organic solar cell; Thermionic process; Intensive care units
|Appears in Collections:||光電工程學研究所|
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