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  4. Correlation of the electronic structure of an interconnection unit with the device performance of tandem organic solar cells
 
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Correlation of the electronic structure of an interconnection unit with the device performance of tandem organic solar cells

Journal
Journal of Materials Chemistry A
Journal Volume
2
Journal Issue
15
Pages
5450-5454
Date Issued
2014
Author(s)
CHIH-I WU  
Shim, H.-S.
Chang, J.-H.
Yoo, S.-J.
Wu, C.-I.
Kim, J.-J.
CHIH-I WU  
DOI
10.1039/c3ta14628f
URI
http://www.scopus.com/inward/record.url?eid=2-s2.0-84896467994&partnerID=MN8TOARS
http://scholars.lib.ntu.edu.tw/handle/123456789/387675
Abstract
We report the correlation of the electrical properties of the p-doped layer in an interconnection unit with the performance of tandem organic photovoltaic (TOPV) cells where the interconnection unit (ICU) is composed of an electron-transporting layer (ETL)/metal/p-doped hole-transporting layer (p-HTL) by systematically varying the doping concentration of the p-HTL in the ICU. The open circuit voltage is significantly increased as the doping concentration of the p-HTL increases due to the reduction of the difference between the Fermi level and the highest occupied molecular orbital level of the p-HTL. The fill factor is also enhanced with increases in the doping concentration of the p-HTL due to the enhancement of the conductivity in the p-HTL and efficient hole transport at the interface between Ag and the p-HTL through the tunneling process, rather than through the thermionic process. © 2014 the Partner Organisations.
SDGs

[SDGs]SDG7

Other Subjects
Electric properties; Electronic structure; Hole concentration; Open circuit voltage; Device performance; Doping concentration; Electron-transporting layers; Highest occupied molecular orbital; Hole-transporting layers; Organic photovoltaics; Organic solar cell; Thermionic process; Intensive care units
Type
journal article

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