https://scholars.lib.ntu.edu.tw/handle/123456789/387675
標題: | Correlation of the electronic structure of an interconnection unit with the device performance of tandem organic solar cells | 作者: | CHIH-I WU Shim, H.-S. Chang, J.-H. Yoo, S.-J. Wu, C.-I. Kim, J.-J. CHIH-I WU |
公開日期: | 2014 | 卷: | 2 | 期: | 15 | 起(迄)頁: | 5450-5454 | 來源出版物: | Journal of Materials Chemistry A | 摘要: | We report the correlation of the electrical properties of the p-doped layer in an interconnection unit with the performance of tandem organic photovoltaic (TOPV) cells where the interconnection unit (ICU) is composed of an electron-transporting layer (ETL)/metal/p-doped hole-transporting layer (p-HTL) by systematically varying the doping concentration of the p-HTL in the ICU. The open circuit voltage is significantly increased as the doping concentration of the p-HTL increases due to the reduction of the difference between the Fermi level and the highest occupied molecular orbital level of the p-HTL. The fill factor is also enhanced with increases in the doping concentration of the p-HTL due to the enhancement of the conductivity in the p-HTL and efficient hole transport at the interface between Ag and the p-HTL through the tunneling process, rather than through the thermionic process. © 2014 the Partner Organisations. |
URI: | http://www.scopus.com/inward/record.url?eid=2-s2.0-84896467994&partnerID=MN8TOARS http://scholars.lib.ntu.edu.tw/handle/123456789/387675 |
DOI: | 10.1039/c3ta14628f | SDG/關鍵字: | Electric properties; Electronic structure; Hole concentration; Open circuit voltage; Device performance; Doping concentration; Electron-transporting layers; Highest occupied molecular orbital; Hole-transporting layers; Organic photovoltaics; Organic solar cell; Thermionic process; Intensive care units |
顯示於: | 光電工程學研究所 |
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