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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
A Surface-Field-Based Model for Nanowire MOSFETs with Spatial Variations of Doping Profiles
Details
A Surface-Field-Based Model for Nanowire MOSFETs with Spatial Variations of Doping Profiles
Journal
IEEE Transactions on Electron Devices
Journal Volume
61
Journal Issue
12
Pages
4040-4046
Date Issued
2014-12
Author(s)
Q. Cheng
C. Y. Hong
J. B. Kuo
Y. J. Chen
JAMES-B KUO
DOI
10.1109/TED.2014.2364781
URI
http://scholars.lib.ntu.edu.tw/handle/123456789/388599
Type
journal article
