Skip to main content
English
中文
Log In
Log in
Log in with ORCID
NTU Single Sign On
Have you forgotten your password?
Home
College of Electrical Engineering and Computer Science / 電機資訊學院
Photonics and Optoelectronics / 光電工程學研究所
Impact of Gate Metal on the Performance of p-GaN/AlGaN/GaN High Electron Mobility Transistors
Details
Impact of Gate Metal on the Performance of p-GaN/AlGaN/GaN High Electron Mobility Transistors
Journal
IEEE Electron Device Letters
Journal Volume
36
Journal Issue
3
Pages
232-234
Date Issued
2015
Author(s)
Lee, Finella
Su, Liang-Yu
Wang, Chih-Hao
Wu, Yuh-Renn
Huang, Jianjang
JIAN-JANG HUANG
YUH-RENN WU
DOI
10.1109/LED.2015.2395454
URI
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000350336100006&KeyUID=WOS:000350336100006
http://scholars.lib.ntu.edu.tw/handle/123456789/390934
Type
journal article