https://scholars.lib.ntu.edu.tw/handle/123456789/390946
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Mori, Tatsuhiro | en_US |
dc.contributor.author | CHIH-JUNG CHEN | en_US |
dc.contributor.author | Hung, Tai-Feng | en_US |
dc.contributor.author | Mohamed, Saad Gomaa | en_US |
dc.contributor.author | Lin, Yi-Qiao | en_US |
dc.contributor.author | Lin, Hong-Zheng | en_US |
dc.contributor.author | Sung, James C. | en_US |
dc.contributor.author | Hu, Shu-Fen | en_US |
dc.contributor.author | Liu, Ru-Shi | en_US |
dc.contributor.author | RU-SHI LIU | zz |
dc.creator | RU-SHI LIU | - |
dc.date.accessioned | 2018-09-10T15:19:18Z | - |
dc.date.available | 2018-09-10T15:19:18Z | - |
dc.date.issued | 2015 | - |
dc.identifier.uri | http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000353499400025&KeyUID=WOS:000353499400025 | - |
dc.identifier.uri | http://scholars.lib.ntu.edu.tw/handle/123456789/390946 | - |
dc.description.abstract | A graphene/silicon (Si) multilayer sandwich structures are fabricated using electron beam (EB) deposition without air exposure. The graphene and Si thin films are formed on Cu current correctors through a continuous process in high-vacuum EB chamber. Synthesized graphene should be suggested to the stacked multiple layer from Raman analysis. The fabricated multilayer films are used as anodes. In the beginning, the half-cell, which used a seven-layer of each thickness 50-nm graphene and Si film, exhibits good specific capacity retention over 1000 mA h g-1 after 30 charge/discharge cycles. The capacity value changed with the number of graphene and Si layers. In this study, the number of layers that exhibited optimal properties is seven. Morphological investigation showed a fine layer-by-layer structure. The relationship between different thicknesses of graphene and Si is investigated at 7 L. A 100-nm thickness exhibited optimal properties. Finally, the optimal 7 L and 100-nm thick graphene/Si exhibited high discharge capacitance >1600 mA h g-1 at a current density of 100 mA g-1 after 30 cycles. Initial coulombic and reversible efficiencies exceed 84%. The capacity retention (30th/1st discharge value) at 100 nm and 7 L exceeds 90%. Finally, the soft package battery is assembled by combining the fabricated graphene and Si electrode as anode, LiCoO2 as cathode, separator and liquid electrolyte. It can be used for commercial light-emitting diode (LED) lighting even under bending status. © 2015 Elsevier Ltd. All rights reserved. | - |
dc.language | en | en |
dc.relation.ispartof | Electrochimica Acta | en_US |
dc.source | AH | - |
dc.subject | Anode material; Electron beam evaporation; Graphene/silicon multilayer structures; Layer-by-layer structures; Lithium-ion batteries | - |
dc.subject.classification | [SDGs]SDG7 | - |
dc.subject.other | Anodes; Copper; Electric batteries; Electrodes; Electron beams; Evaporation; Fabrication; Film preparation; Graphene; Light emitting diodes; Lithium; Lithium alloys; Lithium compounds; Lithium-ion batteries; Multilayer films; Multilayers; Physical vapor deposition; Sandwich structures; Secondary batteries; Silicon; Anode material; Charge/discharge cycle; Electron beam evaporation; High specific capacity; Layer by layer structure; Liquid electrolytes; Multilayer structures; Specific capacities; Lithium batteries | - |
dc.title | High specific capacity retention of graphene/silicon nanosized sandwich structure fabricated by continuous electron beam evaporation as anode for lithium-ion batteries | - |
dc.type | journal article | en |
dc.identifier.doi | 10.1016/j.electacta.2015.02.219 | - |
dc.identifier.scopus | 2-s2.0-84924350587 | - |
dc.identifier.isi | WOS:000353499400025 | - |
dc.relation.pages | 166-172 | - |
dc.relation.journalvolume | 165 | - |
item.openairetype | journal article | - |
item.fulltext | no fulltext | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.grantfulltext | none | - |
item.cerifentitytype | Publications | - |
crisitem.author.dept | Program in Nanoengineering and Nanoscience | - |
crisitem.author.dept | Chemistry | - |
crisitem.author.orcid | 0000-0002-3309-7908 | - |
crisitem.author.orcid | 0000-0002-1291-9052 | - |
crisitem.author.parentorg | Graduate School of Advanced Technology | - |
crisitem.author.parentorg | College of Science | - |
顯示於: | 化學系 |
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