Nanoscale Epitaxial Lateral Overgrowth of GaN-Based Light-Emitting Diodes on an AlN Nanorod-Array Template
Journal
IEEE Journal of Quantum Electronics
Journal Volume
51
Journal Issue
5
Pages
1--5
Date Issued
2015-05
Author(s)
Abstract
Despite the rapid progress of GaN light-emitting diodes, the quest for better epistructure quality with less defects and relaxed strains to achieve higher internal quantum efficiency has been a popular topic. Here, we propose an AlN nanorod template grown on the sapphire substrate using vapor-liquid-solid method. The corresponding material quality, including voids near nanorods, Raman spectra, and transmission electron microscopy images, indicates significant improvement.
Type
journal article