Junctionless Gate-All-Around pFETs Using In-situ Boron-Doped Ge Channel on Si

Journal

IEEE Transactions on Nanotechnology

Journal Volume

14

Journal Issue

5

Pages

878-882

Date Issued

2015

Author(s)

Wong, I.-H.

Chen, Y.-T.

Huang, S.-H.

Tu, W.-H.

Chen, Y.-S.

DOI

10.1109/TNANO.2015.2456182

URI

http://www.scopus.com/inward/record.url?eid=2-s2.0-84960486010&partnerID=MN8TOARS

http://scholars.lib.ntu.edu.tw/handle/123456789/393209

Type

journal article