https://scholars.lib.ntu.edu.tw/handle/123456789/393491
Title: | A Fully Transparent Resistive Memory for Harsh Environments | Authors: | Yang, Po-Kang Ho, Chih-Hsiang Lien, Der-Hsien Durán Retamal, José Ramón Kang, Chen-Fang Chen, Kuan-Ming Huang, Teng-Han Yu, Yueh-Chung CHIH-I WU He, Jr-Hau |
Issue Date: | 2015 | Journal Volume: | 5 | Source: | Scientific Reports | Abstract: | A fully transparent resistive memory (TRRAM) based on Hafnium oxide (HfO2) with excellent transparency, resistive switching capability, and environmental stability is demonstrated. The retention time measured at 85 °C is over 3 × 10 4 sec, and no significant degradation is observed in 130 cycling test. Compared with ZnO TRRAM, HfO2 TRRAM shows reliable performance under harsh conditions, such as high oxygen partial pressure, high moisture (relative humidity = 90% at 85 °C), corrosive agent exposure, and proton irradiation. Moreover, HfO2 TRRAM fabricated in cross-bar array structures manifests the feasibility of future high density memory applications. These findings not only pave the way for future TRRAM design, but also demonstrate the promising applicability of HfO2 TRRAM for harsh environments. |
URI: | http://www.scopus.com/inward/record.url?eid=2-s2.0-84943736487&partnerID=MN8TOARS http://scholars.lib.ntu.edu.tw/handle/123456789/393491 |
DOI: | 10.1038/srep15087 |
Appears in Collections: | 光電工程學研究所 |
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