https://scholars.lib.ntu.edu.tw/handle/123456789/393491
標題: | A Fully Transparent Resistive Memory for Harsh Environments | 作者: | Yang, Po-Kang Ho, Chih-Hsiang Lien, Der-Hsien Durán Retamal, José Ramón Kang, Chen-Fang Chen, Kuan-Ming Huang, Teng-Han Yu, Yueh-Chung CHIH-I WU He, Jr-Hau |
公開日期: | 2015 | 卷: | 5 | 來源出版物: | Scientific Reports | 摘要: | A fully transparent resistive memory (TRRAM) based on Hafnium oxide (HfO2) with excellent transparency, resistive switching capability, and environmental stability is demonstrated. The retention time measured at 85 °C is over 3 × 10 4 sec, and no significant degradation is observed in 130 cycling test. Compared with ZnO TRRAM, HfO2 TRRAM shows reliable performance under harsh conditions, such as high oxygen partial pressure, high moisture (relative humidity = 90% at 85 °C), corrosive agent exposure, and proton irradiation. Moreover, HfO2 TRRAM fabricated in cross-bar array structures manifests the feasibility of future high density memory applications. These findings not only pave the way for future TRRAM design, but also demonstrate the promising applicability of HfO2 TRRAM for harsh environments. |
URI: | http://www.scopus.com/inward/record.url?eid=2-s2.0-84943736487&partnerID=MN8TOARS http://scholars.lib.ntu.edu.tw/handle/123456789/393491 |
DOI: | 10.1038/srep15087 |
顯示於: | 光電工程學研究所 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。