https://scholars.lib.ntu.edu.tw/handle/123456789/404883
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Rajesh Kumar Ulaganathan | en_US |
dc.contributor.author | Kanchan Yadav | en_US |
dc.contributor.author | Raman Sankar | en_US |
dc.contributor.author | Fang Cheng Chou | en_US |
dc.contributor.author | Yit-Tsong Chen | en_US |
dc.creator | Fang Cheng Chou;Raman Sankar;Kanchan Yadav;Rajesh Kumar Ulaganathan;Yit-Tsong Chen | - |
dc.date.accessioned | 2019-03-15T09:16:08Z | - |
dc.date.available | 2019-03-15T09:16:08Z | - |
dc.date.issued | 2019 | - |
dc.identifier.uri | https://scholars.lib.ntu.edu.tw/handle/123456789/404883 | - |
dc.description.abstract | Hybrid structures-based phototransistors are intensively studied recently to achieve high-performance optoelectronic devices. The hybridization of 2D materials and quantum dots (QDs) is one of the ideal platforms for photodetection applications with the merits of high detection sensitivity and wide wavelength coverage. The broadband absorption of a hybrid device stems from various absorbers with multiple bandgaps to create high photocurrent from an efficient exciton generation mechanism under illumination. Here, a new optoelectronic hybrid device of an indium selenide (InSe) nanosheets-based phototransistor is introduced decorated with molybdenum disulfide (MoS2) QDs to possess the photoresponsivity (Rλ) of 9304 A W−1, which is ≈103 times higher than Rλ ≈ 12.3 A W−1 of the previously reported InSe photodetector. The escalated Rλ of this hybrid photodetector is due to the additional injection of photoexcited charge carriers from MoS2 QDs to the InSe phototransistor. Finally, the photovoltaic performance of this MoS2/InSe hybrid device is investigated. The open-circuit voltage (Voc) and short-circuit current density (Jsc) are determined to be 0.52 V and 15.6 mA cm−2, respectively, rendering the photovoltaic efficiency of 3.03%. The development of this MoS2/InSe hybrid phototransistor with high device performance and wide wavelength photodetection will bring a new type of optoelectronic applications in the future. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim | - |
dc.relation.ispartof | Advanced Materials Interfaces | en_US |
dc.subject.classification | [SDGs]SDG7 | - |
dc.subject.other | Layered semiconductors; Molybdenum compounds; Nanocrystals; Nanosheets; Open circuit voltage; Optoelectronic devices; Photodetectors; Photoelectrochemical cells; Photons; Phototransistors; Photovoltaic cells; Selenium compounds; Semiconductor quantum dots; Sulfur compounds; Detection sensitivity; Hybrid devices; Hybrid photo detectors; Optoelectronic applications; Optoelectronic hybrid; Photo-voltaic efficiency; Photovoltaic performance; Photovoltaics; Indium compounds | - |
dc.title | Hybrid InSe Nanosheets and MoS2 Quantum Dots for High-Performance Broadband Photodetectors and Photovoltaic Cells | en_US |
dc.type | journal article | en |
dc.identifier.doi | 10.1002/admi.201801336 | - |
dc.identifier.isi | WOS:000456673900021 | - |
item.fulltext | no fulltext | - |
item.grantfulltext | none | - |
dc.relation.pages | 1801336 | - |
dc.relation.journalvolume | 6 | - |
dc.relation.journalissue | 2 | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.openairetype | journal article | - |
item.grantfulltext | none | - |
item.cerifentitytype | Publications | - |
item.fulltext | no fulltext | - |
crisitem.author.dept | Chemistry | - |
crisitem.author.orcid | 0000-0002-6204-8320 | - |
crisitem.author.parentorg | College of Science | - |
顯示於: | 化學系 |
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