|Title:||Extracting elastic properties of an atomically thin interfacial layer by time-domain analysis of femtosecond acoustics||Authors:||Chen, H. Y.
Shih, H. Y.
Chen, M. J.
|Issue Date:||20-Nov-2017||Journal Volume:||111||Journal Issue:||21||Source:||Applied Physics Letters||Abstract:||
© 2017 Author(s). Modern devices adopting denser designs and complex 3D structures have created much more interfaces than before, where atomically thin interfacial layers could form. However, fundamental information such as the elastic property of the interfacial layers is hard to measure. The elastic property of the interfacial layer is of great importance in both thermal management and nano-engineering of modern devices. Appropriate techniques to probe the elastic properties of interfacial layers as thin as only several atoms are thus critically needed. In this work, we demonstrated the feasibility of utilizing the time-resolved femtosecond acoustics technique to extract the elastic properties and mass density of a 1.85-nm-thick interfacial layer, with the aid of transmission electron microscopy. We believe that this femtosecond acoustics approach will provide a strategy to measure the absolute elastic properties of atomically thin interfacial layers.
|Appears in Collections:||生醫電子與資訊學研究所|
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