|Title:||(110)-oriented indium tin oxide films grown on m- and r-plane sapphire substrates||Authors:||Lu, Tso Wen
Xu, Wei Lun
|Issue Date:||1-Jan-2015||Journal Volume:||54||Journal Issue:||4||Source:||Japanese Journal of Applied Physics||Abstract:||
© 2015 The Japan Society of Applied Physics. Indium tin oxide (ITO) thin films have been deposited by pulsed laser deposition on m-plane (100) and r-plane (012) sapphire substrates. For both substrates, the films were grown with their  direction perpendicular to the substrate planes under the conditions of high growth temperature and high oxygen pressure. Their in-plane epitaxial relations with the substrates were identified to be ITO || Al2O3 and ITO || Al2O3 for the m-plane substrate. For the r-plane substrate, two types of lattice matching were observed: one being ITO || Al2O3[2, 1, -1/2] and ITO || Al2O3[4/3, -4/3, 2/3], the other being ITO || Al2O3[1, -1, 1/2] and ITO/Al2O3[8/3, 4/3, -2/3]. The electrical properties were measured by the Hall effect and van der Pauw methods at room temperature. All of the samples have low electrical resistivity on the order of 3.0 × 10-4 Ω cm, high carrier concentration of about 2.5 × 1020 cm-3, and mobility ranging from 70 to 90 cm2V-1 s-1.
|Appears in Collections:||物理學系|
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