|Title:||Cr-induced Perpendicular Magnetic Anisotropy and Field-Free Spin-Orbit-Torque Switching||Authors:||Chuang, T. C.
Huang, S. Y.
|Issue Date:||20-Jun-2019||Journal Volume:||11||Journal Issue:||6||Source:||Physical Review Applied||Abstract:||
© 2019 American Physical Society. Current-induced spin-orbit torque (SOT) driven magnetization switching has relied mostly on 4d and 5d heavy metals with strong spin-orbit coupling to generate large spin currents to deliver SOT and a MgO layer to acquire perpendicular magnetic anisotropy (PMA). We demonstrate 3d Cr metal can generate PMA and deliver SOT switching with more prowess than Ta. In certain Cr-based heterostructures, even field-free SOT switching has been achieved due to the subtle microstructure in the layered structure. The field-free SOT switching device based on 3d Cr provides significant advantages for next generation high-efficiency and low-cost nonvolatile spintronic devices.
|Appears in Collections:||物理學系|
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