https://scholars.lib.ntu.edu.tw/handle/123456789/425211
Title: | Effects of electro-mechanical stressing on the electrical characterization of on-plastic a-Si:H thin film transistors | Authors: | Chen J.Z. Yeh C.-Y. Chiu I.-C. Cheng I.-C. Huang J.-J. Chen Y.-P. JIAN-ZHANG CHEN |
Issue Date: | 2009 | Journal Volume: | 1153 | Start page/Pages: | 417-422 | Source: | Materials Research Society Symposium | Abstract: | We analyzed the effect of electromechanical stressing on the electrical characteristics of hydrogenated amorphous silicon thin-film transistors. It had been shown that the TFTs, fabricated at 150 ¢XC, respond to tension/compression by a rise/fall in electron mobility. In TFTs fabricated using the same process, a slight shift of threshold voltage was observed under prolonged high compressive strain and the gate leakage current slightly increases after ?2% compressive strain. In general, the change of TFT performance due to pure mechanical straining is small in comparison to electrical gate-bias stressing. From the comparison among Maxwell stress (induced by electrical gate-bias stressing), mechanical stress (applied by bending), and drifting electrical force for passivated hydrogen atom, the most significant cause for the change of electrical characterization of a-Si:H TFTs should be the trapping charges inside the dielectric, under combined electrical and mechanical stressing. The mechanical stress does not act on Si-H bonds to drift hydrogen atoms, while it is mainly balanced by the rigid Si-Si networks in a-Si:H or a-SiNx. Therefore, mechanical stress has very little effect on the instability of low temperature processed a-Si:H TFTs. ? 2009 Materials Research Society. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/425211 | ISBN: | 9781605111261 | ISSN: | 02729172 |
Appears in Collections: | 應用力學研究所 |
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