https://scholars.lib.ntu.edu.tw/handle/123456789/425211
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chen J.Z. | en_US |
dc.contributor.author | Yeh C.-Y. | en_US |
dc.contributor.author | Chiu I.-C. | en_US |
dc.contributor.author | Cheng I.-C. | en_US |
dc.contributor.author | Huang J.-J. | en_US |
dc.contributor.author | Chen Y.-P. | en_US |
dc.contributor.author | JIAN-ZHANG CHEN | en_US |
dc.creator | Chen Y.-P.;Huang J.-J.;Cheng I.-C.;Chiu I.-C.;Yeh C.-Y.;Chen J.Z.;JIAN-ZHANG CHEN | - |
dc.date.accessioned | 2019-09-26T07:09:05Z | - |
dc.date.available | 2019-09-26T07:09:05Z | - |
dc.date.issued | 2009 | - |
dc.identifier.isbn | 9781605111261 | - |
dc.identifier.issn | 02729172 | - |
dc.identifier.uri | https://scholars.lib.ntu.edu.tw/handle/123456789/425211 | - |
dc.description.abstract | We analyzed the effect of electromechanical stressing on the electrical characteristics of hydrogenated amorphous silicon thin-film transistors. It had been shown that the TFTs, fabricated at 150 ¢XC, respond to tension/compression by a rise/fall in electron mobility. In TFTs fabricated using the same process, a slight shift of threshold voltage was observed under prolonged high compressive strain and the gate leakage current slightly increases after ?2% compressive strain. In general, the change of TFT performance due to pure mechanical straining is small in comparison to electrical gate-bias stressing. From the comparison among Maxwell stress (induced by electrical gate-bias stressing), mechanical stress (applied by bending), and drifting electrical force for passivated hydrogen atom, the most significant cause for the change of electrical characterization of a-Si:H TFTs should be the trapping charges inside the dielectric, under combined electrical and mechanical stressing. The mechanical stress does not act on Si-H bonds to drift hydrogen atoms, while it is mainly balanced by the rigid Si-Si networks in a-Si:H or a-SiNx. Therefore, mechanical stress has very little effect on the instability of low temperature processed a-Si:H TFTs. ? 2009 Materials Research Society. | - |
dc.language | English | - |
dc.relation.ispartof | Materials Research Society Symposium | - |
dc.title | Effects of electro-mechanical stressing on the electrical characterization of on-plastic a-Si:H thin film transistors | en_US |
dc.type | conference paper | en |
dc.identifier.scopus | 2-s2.0-77951106713 | - |
dc.identifier.url | https://www2.scopus.com/inward/record.uri?eid=2-s2.0-77951106713&partnerID=40&md5=4c23f8268480fc104a4244a947460582 | - |
dc.relation.pages | 417-422 | - |
dc.relation.journalvolume | 1153 | - |
item.openairecristype | http://purl.org/coar/resource_type/c_5794 | - |
item.openairetype | conference paper | - |
item.grantfulltext | none | - |
item.cerifentitytype | Publications | - |
item.fulltext | no fulltext | - |
crisitem.author.dept | Applied Mechanics | - |
crisitem.author.orcid | 0000-0002-1071-2234 | - |
crisitem.author.parentorg | College of Engineering | - |
顯示於: | 應用力學研究所 |
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