|Title: ||HfZnO/ZnO heterostructures fabricated using low-cost large-area compatible sputtering processes
||Authors: ||Li C.-H.
|Issue Date: ||2015
||Journal Volume: ||1731
||Start page/Pages: ||18-24
||Source: ||Materials Research Society Symposium Proceedings
We investigated the electrical properties of the rf-sputtered HfxZn1-xO/ZnO heterostructures. The thermal annealing on ZnO prior to the HfxZn1-xO deposition greatly influences the properties of the heterostructures. A highly conductive interface formed at the interface between HfxZn1-xO and ZnO thin films as the ZnO annealing temperature exceeded 500¢XC, leading to the apparent decrease of the electrical resistance. The resistance decreased with an increase of either thickness or Hf content of the HfxZn1-xO capping layer. The Hf0.05Zn0.95O/ZnO heterostructure with a 200-nm-thick 600¢XC-annealed ZnO exhibits a carrier mobility of 14.3 cm2V-1-1and a sheet carrier concentration of 1.93x1013 cm-2; the corresponding values for the bare ZnO thin film are 0.47 cm2V-1s-1and 2.27x1012 cm-2, respectively. Rf- sputtered HfZnO/ZnO heterostructures can potentially be used to increase the carrier mobility of thin-film transistors in large-area electronics. ? 2015 Materials Research Society.
2014 MRS Fall Meeting,30 November 2014 through 5 December 2014,
|Appears in Collections:||應用力學研究所|