https://scholars.lib.ntu.edu.tw/handle/123456789/425241
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chung H. | en_US |
dc.contributor.author | Chen J.-Z. | en_US |
dc.contributor.author | JIAN-ZHANG CHEN | en_US |
dc.contributor.author | I-CHUN CHENG | en_US |
dc.creator | Cheng I.-C.;Chen J.-Z.;Chung H.;JIAN-ZHANG CHEN | - |
dc.date.accessioned | 2019-09-26T07:09:14Z | - |
dc.date.available | 2019-09-26T07:09:14Z | - |
dc.date.issued | 2012 | - |
dc.identifier.isbn | 9781605114095 | - |
dc.identifier.issn | 02729172 | - |
dc.identifier.uri | https://scholars.lib.ntu.edu.tw/handle/123456789/425241 | - |
dc.description.abstract | MgZnO becomes amorphous or short-range-ordered with the addition of hafnium oxide. The films are rf-sputter deposited onto glass substrates (Eagle 2000, Corning Inc.) from Mg 0.05Hf xZn 0.95-xO targets (x=0, 0.025, 0.05, 0.075, 0.1) in pure Ar ambient at room temperature. The sputtered Mg 0.05Zn 0.95O exhibits strong (002) preferred orientation with XRD peak located at 2£c=34.16¢X. The XRD peak intensity is also greatly reduced, indicating the material amorphorization proceeds with the addition of Hf. The grain size, estimated from the full-width-at-half- maximum (FWHM) of the (002) XRD peak, decreases from 24.1 to 3.3 nm as the Hf content x increases from 0 to 0.025 in Mg 0.05Hf xZn 0.95-xO. No sharp XRD peaks are detected in the as-sputtered films when more than 5.0 at.% Hf are added into the materials. The films remain in amorphous or short-range-ordered states after annealing at 600 ¢XC for 30 mins. All Mg 0.05Hf xZn 0.95-xO films (100 nm in thickness) are highly transparent (> 80 %) in the visible region from 400 to 800 nm and have sharp absorption edges in the UV region. The tauc bandgap £GE (eV), as a function of hafnium composition x, is fitted as £GE=3.336+6.08x for room temperature as-deposited films, and £GE=3.302+2.60x for films after 30 min 600 ¢XC annealing. The annealing process decreases the bandgap shift caused by the incorporation of Hf in the materials. ? 2012 Materials Research Society. | - |
dc.language | English | - |
dc.relation.ispartof | Materials Research Society Symposium | - |
dc.title | Characterization of rf-sputtered HfMgZnO thin films | en_US |
dc.type | conference paper | en |
dc.identifier.doi | 10.1557/opt.2012.910 | - |
dc.identifier.scopus | 2-s2.0-84867260304 | - |
dc.identifier.url | https://www2.scopus.com/inward/record.uri?eid=2-s2.0-84867260304&doi=10.1557%2fopt.2012.910&partnerID=40&md5=9f8ba3918a7a9ea7e43a932e25b7c0b0 | - |
dc.relation.pages | 187-191 | - |
dc.relation.journalvolume | 1432 | - |
item.cerifentitytype | Publications | - |
item.grantfulltext | none | - |
item.fulltext | no fulltext | - |
item.openairecristype | http://purl.org/coar/resource_type/c_5794 | - |
item.openairetype | conference paper | - |
crisitem.author.dept | Applied Mechanics | - |
crisitem.author.dept | Photonics and Optoelectronics | - |
crisitem.author.dept | Electrical Engineering | - |
crisitem.author.orcid | 0000-0002-1071-2234 | - |
crisitem.author.orcid | 0000-0003-2209-3298 | - |
crisitem.author.parentorg | College of Engineering | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
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