https://scholars.lib.ntu.edu.tw/handle/123456789/425242
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Tsai Y.-S. | en_US |
dc.contributor.author | Chen J.-Z. | en_US |
dc.contributor.author | JIAN-ZHANG CHEN | en_US |
dc.creator | Chen J.-Z.;Tsai Y.-S.;JIAN-ZHANG CHEN | - |
dc.date.accessioned | 2019-09-26T07:09:14Z | - |
dc.date.available | 2019-09-26T07:09:14Z | - |
dc.date.issued | 2012 | - |
dc.identifier.issn | 00189383 | - |
dc.identifier.uri | https://scholars.lib.ntu.edu.tw/handle/123456789/425242 | - |
dc.description.abstract | This paper investigates the positive gate-bias temperature stability of RF-sputtered bottom-gate Mg 0.05Zn 0.95O active-layer thin-film transistors (TFTs) annealed at 200 ¢XC for 5 h and 350 ¢XC for 30 min. Although the TFT devices initially exhibited similar electrical characteristics, the TFTs annealed at 350 ¢XC demonstrated stability characteristics superior to those annealed at 200 ¢XC. This result is due to the improved crystallinity and more stable phase with greater proportion of Zn replaced by Mg in the ZnO crystals. The results also reveal a hump shape in the subthreshold region of the transfer characteristics, which is induced by the positive gate-bias stress at elevated temperatures. The hump phenomenon was suppressed in the TFT annealed at 350 ¢XC. The hump disappeared shortly after removing the positive gate bias, suggesting that this phenomenon was meta-stable and resulted from gate-bias-induced electric field. One possible mechanism responsible for the hump formation in the transfer curve is the gate-field-induced back-channel parasitic transistor. Alternatively, this hump phenomenon might have been due to the creation of meta-stable vacancies in which the neutral defects were thermally excited and released electrons into the active layer to form a leakage path when the TFTs were subjected to gate-bias stress at elevated temperatures. ? 2006 IEEE. | - |
dc.language | English | - |
dc.relation.ispartof | IEEE Transactions on Electron Devices | - |
dc.subject | Gate-bias stability | - |
dc.subject | MgO | - |
dc.subject | MgZnO | - |
dc.subject | oxide thin-film transistors (TFTs) | - |
dc.subject | thermal stability | - |
dc.title | Positive gate-bias temperature stability of RF-sputtered Mg 0.05Zn 0.95O active-layer thin-film transistors | en_US |
dc.type | journal article | en |
dc.identifier.doi | 10.1109/TED.2011.2172212 | - |
dc.identifier.scopus | 2-s2.0-84855449286 | - |
dc.identifier.url | https://www2.scopus.com/inward/record.uri?eid=2-s2.0-84855449286&doi=10.1109%2fTED.2011.2172212&partnerID=40&md5=018f18b5afac99f77ff5ec49d5e7f303 | - |
dc.relation.pages | 151-158 | - |
dc.relation.journalvolume | 59 | - |
dc.relation.journalissue | 1 | - |
item.openairetype | journal article | - |
item.fulltext | no fulltext | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.grantfulltext | none | - |
item.cerifentitytype | Publications | - |
crisitem.author.dept | Applied Mechanics | - |
crisitem.author.orcid | 0000-0002-1071-2234 | - |
crisitem.author.parentorg | College of Engineering | - |
顯示於: | 應用力學研究所 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。