https://scholars.lib.ntu.edu.tw/handle/123456789/425256
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chiu I.-C. | en_US |
dc.contributor.author | Cheng I.-C. | en_US |
dc.contributor.author | Chen J.-Z. | en_US |
dc.contributor.author | Huang J.-J. | en_US |
dc.contributor.author | Chen Y.-P. | en_US |
dc.contributor.author | JIAN-ZHANG CHEN | en_US |
dc.creator | Chen Y.-P.;Huang J.-J.;Chen J.-Z.;Cheng I.-C.;Chiu I.-C.;JIAN-ZHANG CHEN | - |
dc.date.accessioned | 2019-09-26T07:09:18Z | - |
dc.date.available | 2019-09-26T07:09:18Z | - |
dc.date.issued | 2009 | - |
dc.identifier.uri | https://scholars.lib.ntu.edu.tw/handle/123456789/425256 | - |
dc.description.abstract | The effects of mechanical strain parallel to channel on electron field-effect mobility and electrical stability of £gc-Si thin film transistors (TFTs) on Polyimide have been investigated. The electron field-effect mobility slightly increases with the mechanical strain. However, electrical stability of TFTs becomes worse under some mechanical strain. | - |
dc.language | English | - |
dc.relation.ispartof | 2009 International Display Manufacturing Conference, 3D Systems and Applications, and Asia Display | - |
dc.title | Effects of mechanical strain on electrical properties and stability of £gc-Si thin film transistors on Polyimide | en_US |
dc.type | conference paper | en |
dc.identifier.scopus | 2-s2.0-79952059844 | - |
dc.identifier.url | https://www2.scopus.com/inward/record.uri?eid=2-s2.0-79952059844&partnerID=40&md5=ef6478a313f35235ccdba8097a7f138d | - |
item.openairetype | conference paper | - |
item.fulltext | no fulltext | - |
item.openairecristype | http://purl.org/coar/resource_type/c_5794 | - |
item.grantfulltext | none | - |
item.cerifentitytype | Publications | - |
crisitem.author.dept | Applied Mechanics | - |
crisitem.author.orcid | 0000-0002-1071-2234 | - |
crisitem.author.parentorg | College of Engineering | - |
顯示於: | 應用力學研究所 |
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