https://scholars.lib.ntu.edu.tw/handle/123456789/425314
標題: | Nitrogen Atmospheric-Pressure-Plasma-Jet Induced Oxidation of SnOx Thin Films | 作者: | Lin G.-W. Jiang Y.-H. Kao P.-K. Chiu I.-C. Wu Y.-H. Hsu C.-C. I-CHUN CHENG JIAN-ZHANG CHEN |
關鍵字: | Atmospheric pressure plasma jet;Oxidation;Sn;SnO;SnO2;SnOx | 公開日期: | 2015 | 卷: | 35 | 期: | 6 | 起(迄)頁: | 979-991 | 來源出版物: | Plasma Chemistry and Plasma Processing | 摘要: | SnOx thin films that were rf-sputter-deposited under various gas flow ratios ([O2]/([O2]?+?[Ar]) OFR?=?3.0, 3.6, 4.2 and 4.8?%) were rapidly annealed using atmospheric pressure plasma jets (APPJs) in temperature range of ~350¡V386?¢XC for up to 5?min. The original electron probe micro-analysis [O] contents in the as-deposited films were ~25, ~30, ~35 and ~40?% for films deposited at ([O2]/([O2]?+?[Ar]) gas flow ratios OFR?=?3.0, 3.6, 4.2 and 4.8?%, respectively. APPJ annealing increased the [O] content to ~35?% for films deposited at OFR?=?3.0 and 3.6?%, where the [O] content remained in similar levels for films deposited at OFR?=?4.2 and 4.8?%. Crystalline metallic Sn was identified in films as-deposited at OFR?=?3.0 and 3.6?%; on the other hand, an X-ray amorphous SnOx phase was identified in films as-deposited at OFR?=?4.2 and 4.8?%. Crystallization and oxidation by APPJ annealing improved the transmittance and blue-shifted the absorption band edge to ~420?nm. All APPJ-annealed films exhibit n-type conductivity that may be contributed by the mixed phases of SnO, SnO2 and a small amount of Sn. ? 2015, Springer Science+Business Media New York. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/425314 | ISSN: | 02724324 | DOI: | 10.1007/s11090-015-9646-5 |
顯示於: | 應用力學研究所 |
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