https://scholars.lib.ntu.edu.tw/handle/123456789/425315
標題: | Oxidation of sputtered metallic Sn thin films using N 2 atmospheric pressure plasma jets | 作者: | Lin G.-W. Jiang Y.-H. Kao P.-K. Chiu I.-C. Wu Y.-H. Hsu C.-C. Cheng I.-C. I-CHUN CHENG JIAN-ZHANG CHEN |
關鍵字: | Atmospheric pressure plasma jet;Oxidation;Sn | 公開日期: | 2015 | 卷: | 2 | 期: | 1 | 起(迄)頁: | - | 來源出版物: | Materials Research Express | 摘要: | Weinvestigated the oxidation of sputtered metallic Sn thin films annealed byN 2 atmospheric pressure plasma jets (APPJs) with and without the introduction of ambient air to the reaction. As the APPJ annealing duration increased, the metallic Sn first oxidized into SnO, and then, a metallic Sn phase reappeared owing to the disproportionation reaction 4Sn¡÷Sn 3 O 4 +Sn¡÷2Sn + 2SnO 2 . The involvement ofO2 from the ambient air led to more reactive oxidation of the thin films. APPJ annealing increased the band gap to?2.6-2.7 eV. All the annealed films show conductivity with unstable readings of carrier types because of the mixed phases of Sn, SnO, and possibly, some SnO 2 in the films. ? 2015 IOP Publishing Ltd. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/425315 | ISSN: | 20531591 | DOI: | 10.1088/2053-1591/2/1/016504 |
顯示於: | 應用力學研究所 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。