https://scholars.lib.ntu.edu.tw/handle/123456789/425324
標題: | Enhancement of gate-bias and current stress stability of P-type SnO thin-film transistors with SiNx/HfO2 passivation layers | 作者: | Hsu S.-M. Li Y.-S. Tu M.-S. He J.-C. Chiu I.-C. Chen P.-G. Lee M.-H. Chen J.-Z. JIAN-ZHANG CHEN I-CHUN CHENG |
公開日期: | 2016 | 起(迄)頁: | 153-156 | 來源出版物: | 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials | 摘要: | In this letter, we report enhanced gate-bias and current stress stability of p-type SnO thin-film transistors passivated with SiNx/HfO2 layers. The improvement is primarily attributed to the effective suppression of bias-induced adsorption of oxygen molecules on the back-channel surface by the presence of passivation layers. Under the gate-bias stress of 10 V and -10 V for 10000 s, the threshold voltage shifts for the passivated TFT are 0.75 V and -0.42 V respectively, while the corresponding values for the unpassivated one are 1.24 V and -0.77 V Under the current stress of 2.5 £gA for 10000 s, the threshold voltage shift is -0.29 V for the passivated TFT and -0.63 V for the unpassivated one. ? 2016 FTFMD. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/425324 | ISBN: | 9784990875312 | DOI: | 10.1109/AM-FPD.2016.7543648 |
顯示於: | 應用力學研究所 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。