https://scholars.lib.ntu.edu.tw/handle/123456789/425324
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Hsu S.-M. | en_US |
dc.contributor.author | Li Y.-S. | en_US |
dc.contributor.author | Tu M.-S. | en_US |
dc.contributor.author | He J.-C. | en_US |
dc.contributor.author | Chiu I.-C. | en_US |
dc.contributor.author | Chen P.-G. | en_US |
dc.contributor.author | Lee M.-H. | en_US |
dc.contributor.author | Chen J.-Z. | en_US |
dc.contributor.author | JIAN-ZHANG CHEN | en_US |
dc.contributor.author | I-CHUN CHENG | en_US |
dc.creator | Cheng I.-C.;Chen J.-Z.;Lee M.-H.;Chen P.-G.;Chiu I.-C.;He J.-C.;Tu M.-S.;Li Y.-S.;Hsu S.-M.;JIAN-ZHANG CHEN | - |
dc.date.accessioned | 2019-09-26T07:09:45Z | - |
dc.date.available | 2019-09-26T07:09:45Z | - |
dc.date.issued | 2016 | - |
dc.identifier.isbn | 9784990875312 | - |
dc.identifier.uri | https://scholars.lib.ntu.edu.tw/handle/123456789/425324 | - |
dc.description.abstract | In this letter, we report enhanced gate-bias and current stress stability of p-type SnO thin-film transistors passivated with SiNx/HfO2 layers. The improvement is primarily attributed to the effective suppression of bias-induced adsorption of oxygen molecules on the back-channel surface by the presence of passivation layers. Under the gate-bias stress of 10 V and -10 V for 10000 s, the threshold voltage shifts for the passivated TFT are 0.75 V and -0.42 V respectively, while the corresponding values for the unpassivated one are 1.24 V and -0.77 V Under the current stress of 2.5 £gA for 10000 s, the threshold voltage shift is -0.29 V for the passivated TFT and -0.63 V for the unpassivated one. ? 2016 FTFMD. | - |
dc.language | English | - |
dc.relation.ispartof | 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials | - |
dc.title | Enhancement of gate-bias and current stress stability of P-type SnO thin-film transistors with SiNx/HfO2 passivation layers | en_US |
dc.type | conference paper | en |
dc.identifier.doi | 10.1109/AM-FPD.2016.7543648 | - |
dc.identifier.scopus | 2-s2.0-84987618879 | - |
dc.identifier.url | https://www2.scopus.com/inward/record.uri?eid=2-s2.0-84987618879&doi=10.1109%2fAM-FPD.2016.7543648&partnerID=40&md5=ebbff36cd54c55fb94f02724da92b8e2 | - |
dc.relation.pages | 153-156 | - |
item.openairecristype | http://purl.org/coar/resource_type/c_5794 | - |
item.openairetype | conference paper | - |
item.grantfulltext | none | - |
item.cerifentitytype | Publications | - |
item.fulltext | no fulltext | - |
crisitem.author.dept | Applied Mechanics | - |
crisitem.author.dept | Photonics and Optoelectronics | - |
crisitem.author.dept | Electrical Engineering | - |
crisitem.author.orcid | 0000-0002-1071-2234 | - |
crisitem.author.orcid | 0000-0003-2209-3298 | - |
crisitem.author.parentorg | College of Engineering | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
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