|Title:||Effect of atomic replacement on the magnetic anisotropy in epitaxially grown ferrite thin films||Authors:||Ade, Ramesh
Chen, Y. S.
Lin, J. G.
|Keywords:||Epitaxial thin films | Ferrites | Ferromagnetic resonance | Magnetic anisotropy | Spintronics||Issue Date:||15-Feb-2020||Journal Volume:||496||Source:||Journal of Magnetism and Magnetic Materials||Abstract:||
© 2019 Elsevier B.V. In the present work, NiFe2O4 (NFO) and MgFe2O4 (MFO) thin films are deposited on MgAl2O4 (MAO)(1 0 0) substrate using pulsed laser deposition technique to investigate the atomic replacement effects on the magnetic anisotropy of the films. X-ray diffraction analysis confirms the c-oriented growth of the films. Magnetic field dependent magnetization discloses the soft magnetic nature, lower saturation magnetic field and large magnetic anisotropy in MFO(25 and 50 nm) films as compared to NFO(27 and 47 nm). In particular, MFO(50 nm) film exhibits a symmetrical ferromagnetic resonance spectrum in contrast to the bulk counterpart. The angular dependence of the resonance field reveals the uniaxial magnetic anisotropy in MFO(50 nm) film, making it one of the potential candidates for energy-efficient information and communication based spintronic devices. An induced magnetic anisotropy in MFO may be ascribed to the magneto-elastic Ni2+ ions replacement with non-magneto-elastic Mg2+ ions.
|Appears in Collections:||凝態科學研究中心|
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