https://scholars.lib.ntu.edu.tw/handle/123456789/427787
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Marcel Filoche | en_US |
dc.contributor.author | Marco Piccardo | en_US |
dc.contributor.author | Yuh-Renn Wu | en_US |
dc.contributor.author | Chi-Kang Li | en_US |
dc.contributor.author | Claude Weisbuch | en_US |
dc.contributor.author | Svitlana Mayboroda | en_US |
dc.contributor.author | YUH-RENN WU | en_US |
dc.creator | YUH-RENN WU;Svitlana Mayboroda;Claude Weisbuch;Chi-Kang Li;Yuh-Renn Wu;Marco Piccardo;Marcel Filoche | - |
dc.date.accessioned | 2019-10-24T08:01:25Z | - |
dc.date.available | 2019-10-24T08:01:25Z | - |
dc.date.issued | 2017 | - |
dc.identifier.issn | 24699950 | - |
dc.identifier.uri | https://scholars.lib.ntu.edu.tw/handle/123456789/427787 | - |
dc.identifier.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85018479449&doi=10.1103%2fPhysRevB.95.144204&partnerID=40&md5=37de0fae7a569387af4ff52034ce1c8a | - |
dc.description.abstract | We present here a model of carrier distribution and transport in semiconductor alloys accounting for quantum localization effects in disordered materials. This model is based on the recent development of a mathematical theory of quantum localization which introduces for each type of carrier a spatial function called localization landscape. These landscapes allow us to predict the localization regions of electron and hole quantum states, their corresponding energies, and the local densities of states. We show how the various outputs of these landscapes can be directly implemented into a drift-diffusion model of carrier transport and into the calculation of absorption/emission transitions. This creates a new computational model which accounts for disorder localization effects while also capturing two major effects of quantum mechanics, namely, the reduction of barrier height (tunneling effect) and the raising of energy ground states (quantum confinement effect), without having to solve the Schrödinger equation. Finally, this model is applied to several one-dimensional structures such as single quantum wells, ordered and disordered superlattices, or multiquantum wells, where comparisons with exact Schrödinger calculations demonstrate the excellent accuracy of the approximation provided by the landscape theory. © 2017 American Physical Society. | - |
dc.relation.ispartof | Physical Review B | - |
dc.subject.other | Computation theory; Functions; Ground state; One dimensional; Quantum chemistry; Semiconductor alloys; Semiconductor quantum wells; Carrier distributions; Disordered materials; Disordered superlattices; Drift-diffusion model; One-dimensional structure; Quantum confinement effects; Quantum localization; Theory and modeling; Quantum theory | - |
dc.title | Localization landscape theory of disorder in semiconductors I: Theory and modeling | en_US |
dc.type | journal article | en |
dc.identifier.doi | 10.1103/physrevb.95.144204 | - |
dc.identifier.scopus | 2-s2.0-85018479449 | - |
dc.relation.pages | 654-659 | - |
dc.relation.journalvolume | 95 | - |
item.cerifentitytype | Publications | - |
item.fulltext | no fulltext | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.openairetype | journal article | - |
item.grantfulltext | none | - |
crisitem.author.dept | Electrical Engineering | - |
crisitem.author.dept | Photonics and Optoelectronics | - |
crisitem.author.orcid | 0000-0002-1457-3681 | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
顯示於: | 光電工程學研究所 |
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